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DATA SHEET DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad.
PACKAGE DIMENSIONS
(Unit: mm)
FEATURES
* Low Noise and High Gain. NF: 2.3 dB, 2.4 dB
0.8 MIN.
4.50.1 1.60.2 1.50.1
S21e: 20 dB, 12.5 dB
* Large PT in Small Package. PT: 2 W with 16 cm 0.7 mm Ceramic Substrate.
2
E
0.42 0.06
C
B
0.420.06 1.5 0.47 0.06 3.0 0.41 +0.05
-0.03
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Termal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT* Rth(j-a)* 35 18 3.0 150 2.0 62.5 V V V mA W
Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89)
C/W Tj 150 C Tstg 65 to +150 C * With 16 cm2 0.7 mm
Ceramic Substrate
Document No. P10405EJ3V0DS00 (3rd edition) (Previous No. TC-1458A) Date Published March 1997 N Printed in Japan
(c)
4.00.25
2.50.1
f = 200 MHz, 500 MHz
1994
2SC2954
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance SYMBOL ICBO hFE fT Cre TEST CONDITIONS VCB = 10 V, IE = 0 VCE = 10 V, IC = 50 mA *1 VCE = 10 V, IC = 50 mA VCB = 10 V, Emitter Grounded, f = 1.0 MHz VCE = 10 V, IC = 50 mA, f = 500 MHz RG = 50 VCE = 10 V, IC = 30 mA, f = 500 MHz RG = 50 10 30 3.0 100 4.0 1.1 1.8 MIN. TYP. MAX. 100 200 UNIT nA
GHz pF
Insertion Power Gain
S21e2
NF
12.5
dB
Noise Figure
2.4
4.0
dB
*1 Pulse Measurement PW 350 s, duty cycle
2 %/Pulsed
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V
200
PT-Total Power Dissipation-W
Ceramic Substrate 16 cm2 x 0.7 mm Rth(j-a) 62.5 C/W 1.0
IC-Collector Current-mA
2.0
100
Free Air Rth(j-a) 312.5 C/W 0 0 50 100 Ta-Ambient Temperature-C 150 0.5 VBE-Base to Emitter Voltage-V 1.0
200
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V
IC-Collector Current-mA
hFE-DC Current Gain
10
2 mA 100 1.5 mA 1 mA IB = 500 A
200 100 70 50 30
0
0 2 4 6 8 VCE-Collector to Emitter Voltage-V
20 10
1
10 100 200 IC-Collector Current-mA
2
2SC2954
10 Cre-Feed-back Capacitance-pF Cob-Output Capacitance-pF 5.0 3.0 2.0 1.0
FEED-BACK AND OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz fT-Gain Bandwidth Product-MHz
10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 10 V
Cob (Emitter Open)
Cve (Emitter Graund) 0.5 0.3 0.2 0.1
0
0.5 1.0 5.0 10 30 VCB-Collector to Base Voltage-V
5.0 10 50 100 IC-Collector Current-mA
30 25 |S21e|2-Insertion Gain-dB 20
INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 100 MHz
30
INSERTION GAIN vs. FREQYENCY VCE = 10 V IC = 50 mA
25 f = 200 MHz
|S21e|2-Insertion Gain-dB 100
20
15 f = 500 MHz 10 5 0 f = 1 GHz
15
10
5
10 20 30 50 IC-Collector Current-mA
5
0 0.1
0.2 0.3 0.5 f-Frequency-GHz
0.7
1.0
3
2SC2954
18 15
Ga-Associated Gain-dB NF-Noise Figure-dB
6 5 4 3 2 1 0
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 500 MHz RG = 50 Ga
12 9 6 3 0
NF
1
2
3
5 7 10 20 IC-Collector Current-mA
30
50
70 100
NOISE FIGURE,vs. FREQUENCY 6 VCE = 10 V IC = 30 mA RG = 50 IM2 IM3 (dB) -80
2SC2945 IM2, IM3 vs. IC at VCE = 10 V V0 = 110 dBV/75 Rg = Re = 75
5
IM2 f = 90 + 100 MHz IM3 f = 2 x 200 - 190 MHz
NF-Noise Figure-dB
4
-70
3
-60
IM3
2
-50 IM2 -40
1 -30 0.2 0.3 0.5 f-Frequency-GHz 1.0 -20 20 30 40 IC (mA) 50 60 70
0 0.1
4
2SC2954
S11e, S22e-FREQUENCY
0.10 0.40 110
0.7
0.6
0.
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD CTION COEF A FCIENT 0.4 REFLE 0.0TOR 3 TOW 6 IN DE 7 0.0 THS ANGLE OF 4 GRE 0.4 NG 0.4 ES 0 4 VELE -160 6 0.0 0.0 A 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 14 0.4 6 00 ENT ITIV 40 ON 0 ER 4 MP 0. -1 EA CO
0.
5
07 43 0. 0 13
1.6
8 0.0 2 0.4 20 1
0.9
1.0
0.8
1.2
9 0.0 1 0.4
0.11 0.39 100
0.12 0.38
0.13 0.37
90
0.14 0.36 80
0.15 0.35
70
1.4
0.1 6 0.3 4
6 00
1.8
0.1 0.3 7 3
0.2
0.
2.0
50
0. 18 32
19 0. 31 0.
N
T EN
0.4
0.2
40
0.3
( -Z-+-J-XTANCE CO ) MPO
0
C
O
WAVELE NG
0 1.
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9 1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
20
0.1
0.6
1. 0
0.2
0.
8
S22e
5.0
4.0
E NC TA X - AC -J -O RE --Z
)
0.3
(
0.
4
E IV AT
0.
5
2.0
0.6
1.8
1.6
0.7
0.8
1.4
0.9
1.2
1.0
CONDITION VCE = 10 V IC = 50 mA f = 0.1 to 1.0 GHz (STEP. 100 MHz)
S21e-FREQUENCY 90 120 0.1 GHz 0.2 150 0.3 0.5 0.7 1.0 5.0 10 15 20 30 150 60 120
S12e-FREQUENCY 90 60 0.1 GHz 0.7 0.5 0.3 0.2 0.1 0 180 0.05 0.1 0.15 0.20 0 30
180
-150
-30
-150
-120
-60 -90
-120
-90
CONDITION VCE = 10 V IC = 50 mA
CONDITION VCE = 10 V IC = 50 mA
10
0.1 GHz
0.4
20
1.0 GHz 0.1 GHz
50
S11e
REACTANCE COMPONENT R ---- 0.2 ZO
(
)
3.
0
0.
32 18 0.
-5
0
3 0.3 7
0.1
-6
4 0.3 6 0.1
0
0.35 0.15 -70
0.36 0.14 -80
1.0
0.8
0.6
0.37 0.13
0.4
0.4
1 GHz
0.8
0.6
0.2
0.2
-90
0.38 0.39 0.12 0.11 -100
0.40 0.10
-11
0
0.4 1 0.0 9
-1 2
0.4 0.0 2 8 0
NE G
-1
0. 4 0. 3 07 30
0.
4
0
0.6
3.
0
1 0.2 9 0.2 30
0.8
0.3
4.0
1. 0
6.0
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.2
10
0.1
20
50
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0. 29 0.2 1 0.3 -3 0.2 0 0 0
-4 0
0. 0. 31 19
-30
-60
5
2SC2954
[MEMO]
6
2SC2954
[MEMO]
7
2SC2954
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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